IXFN34N80
Product Overview
- Category: Power MOSFET
- Use: High power switching applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-268
- Essence: Efficient power management
- Packaging/Quantity: Available in reels of 1000 units
Specifications
- Voltage Rating: 800V
- Current Rating: 34A
- On-Resistance: 0.08 ohms
- Gate Charge: 60nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The IXFN34N80 features a standard TO-268 pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Robust construction for reliable performance
Advantages and Disadvantages
Advantages
- High voltage rating suitable for demanding applications
- Low on-resistance minimizes power loss
- Fast switching speed enhances efficiency
Disadvantages
- Higher gate charge compared to some alternative models
- May require careful thermal management at high currents
Working Principles
The IXFN34N80 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXFN34N80 is ideal for use in high-power applications such as: - Switch-mode power supplies - Motor drives - Inverters - Solar inverters - Induction heating
Detailed and Complete Alternative Models
- Alternative Model 1: IXFN38N100
- Voltage Rating: 1000V
- Current Rating: 38A
- On-Resistance: 0.06 ohms
- Alternative Model 2: IXFN30N60
- Voltage Rating: 600V
- Current Rating: 30A
- On-Resistance: 0.09 ohms
In conclusion, the IXFN34N80 Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it well-suited for various high-power applications. Its robust design and efficient performance make it a reliable choice for demanding power management needs.
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10個與IXFN34N80在技術方案中應用相關的常見問題與解答
What is IXFN34N80?
- IXFN34N80 is a high power MOSFET designed for various technical solutions requiring efficient switching and low on-state resistance.
What are the key specifications of IXFN34N80?
- The key specifications include a drain-source voltage of 800V, continuous drain current of 34A, and low on-state resistance.
In what applications can IXFN34N80 be used?
- IXFN34N80 is commonly used in applications such as motor control, power supplies, inverters, and welding equipment.
What are the advantages of using IXFN34N80 in technical solutions?
- The advantages include high power handling capability, low on-state resistance for reduced power losses, and fast switching characteristics.
How does IXFN34N80 contribute to energy efficiency in technical solutions?
- IXFN34N80's low on-state resistance helps minimize power dissipation, leading to improved energy efficiency in various applications.
What are the thermal considerations when using IXFN34N80?
- Proper heat sinking and thermal management are important to ensure that IXFN34N80 operates within its specified temperature limits for reliable performance.
Can IXFN34N80 be used in automotive applications?
- Yes, IXFN34N80 can be used in automotive applications such as electric vehicle powertrains and battery management systems.
Are there any specific circuit design considerations when using IXFN34N80?
- It's important to consider gate drive requirements, snubber circuits, and protection mechanisms to optimize the performance and reliability of IXFN34N80 in a given application.
What are the typical operating conditions for IXFN34N80?
- Typical operating conditions include a maximum junction temperature, gate-source voltage, and input capacitance, which should be taken into account for proper system design.
Where can I find detailed application notes and reference designs for using IXFN34N80?
- Detailed application notes and reference designs for IXFN34N80 can be found on the manufacturer's website or through their technical support resources.