The IXFN27N80Q belongs to the category of power MOSFETs.
It is used for high-power switching applications in various electronic circuits and systems.
The IXFN27N80Q is typically available in a TO-268 package.
This MOSFET is essential for efficient power management and control in electronic devices and systems.
It is commonly packaged in reels with a quantity of 500 units per reel.
The IXFN27N80Q has a standard pin configuration with three pins: gate, drain, and source.
The IXFN27N80Q operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
The IXFN27N80Q is commonly used in: - Power supplies - Motor control systems - Inverters - Switching regulators - Welding equipment
Some alternative models to the IXFN27N80Q include: - IRFP4668PbF - FDPF33N25T - STW45NM50FD
In conclusion, the IXFN27N80Q is a high-voltage power MOSFET with excellent characteristics for various high-power switching applications. Its fast switching speed, low on-resistance, and high voltage capability make it a valuable component in power management and control systems.
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What is the maximum drain-source voltage of IXFN27N80Q?
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What type of package does IXFN27N80Q come in?
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Does IXFN27N80Q require a heat sink for proper operation?
What is the gate threshold voltage of IXFN27N80Q?
Can IXFN27N80Q be used in parallel to increase current handling capability?
What are some typical applications for IXFN27N80Q?