IS66WV51216DBLL-70TLI

Product Overview

Category

IS66WV51216DBLL-70TLI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WV51216DBLL-70TLI is available in a small outline, thin profile (TSOP) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS66WV51216DBLL-70TLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Model: IS66WV51216DBLL-70TLI
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Operating Voltage: 3.3 Volts
• Speed Grade: 70 nanoseconds (ns)
• Interface: Parallel
• Organization: 16M words x 16 bits
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS66WV51216DBLL-70TLI has a total of 48 pins. Here is the detailed pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. /WE
21. /CAS
22. /RAS
23. /CS
24. A0
25. A1
26. A2
27. A3
28. A4
29. A5
30. A6
31. A7
32. A8
33. A9
34. A10
35. A11
36. A12
37. A13
38. A14
39. A15
40. /OE
41. /LB
42. /UB
43. /CE2
44. /CE1
45. /CE0
46. VSSQ
47. NC
48. VDDQ

Functional Features

• High-speed data transfer
• Burst mode operation
• On-chip address and control registers
• Programmable burst length
• Auto precharge function
• Power-saving modes (auto-refresh and self-refresh)
• Internal pipelined architecture for improved performance

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Requires proper handling and ESD precautions during installation
• Limited compatibility with certain older systems

Working Principles

IS66WV51216DBLL-70TLI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, which are organized into rows and columns. The memory cells are accessed by sending specific address signals and control signals to the device. Data is read from or written to the memory cells in synchronization with a clock signal.

Detailed Application Field Plans

IS66WV51216DBLL-70TLI finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Mobile phones and smartphones - Tablets and handheld devices - Automotive electronics - Industrial control systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality and specifications to IS66WV51216DBLL-70TLI: - MT48LC32M16A2P-75IT: 512 Megabit SDRAM, 3.3V, 70ns, TSOP package - K4S561632H-UC75: 512 Megabit SDRAM, 3.3V, 70ns, TSOP package - HYB39S512800AT-7: 512 Megabit SDRAM, 3.3V, 70ns, TSOP