IS66WV51216DBLL-55TLI

Product Overview

Category

IS66WV51216DBLL-55TLI belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Large storage capacity
• Low power consumption

Package

IS66WV51216DBLL-55TLI is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of IS66WV51216DBLL-55TLI lies in its ability to store and retrieve data quickly and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

IS66WV51216DBLL-55TLI is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary but is usually specified by the manufacturer.

Specifications

• Model: IS66WV51216DBLL-55TLI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 megabits (64 megabytes)
• Operating Voltage: 3.3V
• Speed: 55 nanoseconds (ns)
• Interface: Parallel
• Pin Count: 48 pins
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /UB
37. /LB
38. /CE1
39. /CE2
40. /CE3
41. /CE4
42. /CE5
43. /CE6
44. /CE7
45. /CE8
46. NC
47. GND
48. VCC

Functional Features

• High-speed data access and retrieval
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for energy-efficient operation
• Reliable performance in various temperature ranges
• Easy integration into electronic devices due to compact package size

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable performance in different temperature conditions

Disadvantages

• Higher cost compared to other memory technologies
• Limited write endurance compared to some non-volatile memory types

Working Principles

IS66WV51216DBLL-55TLI operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. The stored data can be accessed and modified at high speeds, making it suitable for applications that require frequent read and write operations.

Detailed Application Field Plans

IS66WV51216DBLL-55TLI finds applications in various electronic devices and systems, including: 1. Computers and servers 2. Smartphones and tablets 3. Networking equipment 4. Automotive electronics 5. Industrial control systems 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

1. IS66WV51216EBLL-55TLI
2. IS66WV51216GBLL-55TLI
3. IS66WV51216HBLL-55TLI
4. IS66WV51216JBLL-55TLI
5. IS66WV51216KBLL-55TLI

These alternative models offer similar specifications and functionality to IS66WV51216DBLL-55TLI, providing options for different application requirements.

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