ISSI, Integrated Silicon Solution Inc
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IS65WV12816BLL-55TLA3
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IS65WV12816BLL-55TLA3

Product Overview

Category

IS65WV12816BLL-55TLA3 belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Compact package size

Package

IS65WV12816BLL-55TLA3 is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS65WV12816BLL-55TLA3 lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS65WV12816BLL-55TLA3 is typically packaged in reels or trays, with a quantity of 1000 units per reel/tray.

Specifications

  • Memory Type: Synchronous DRAM (SDRAM)
  • Organization: 128Mbit x 16
  • Operating Voltage: 3.3V
  • Speed Grade: -55°C to +85°C
  • Interface: Parallel
  • Clock Frequency: 133 MHz
  • Access Time: 5.4 ns
  • Refresh Mode: Auto-refresh and self-refresh
  • Package Type: TSOP-II

Detailed Pin Configuration

The IS65WV12816BLL-55TLA3 has a total of 54 pins. The pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. NC
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. /CAS
  37. /RAS
  38. /WE
  39. /CS
  40. /CKE
  41. /LDQM
  42. /UDQM
  43. /DQS0
  44. /DQS1
  45. VDDQ
  46. VSSQ
  47. VREF
  48. VCC
  49. VSS
  50. NC
  51. NC
  52. NC
  53. NC
  54. NC

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • On-chip ECC (Error Correction Code)
  • Programmable CAS latency
  • Power-saving modes

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Large storage capacity
  • Low power consumption
  • Compact package size

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited endurance (number of read/write cycles)

Working Principles

IS65WV12816BLL-55TLA3 operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The data is accessed by sending specific commands and addresses to the memory device, which then retrieves the corresponding data from the capacitors.

Detailed Application Field Plans

IS65WV12816BLL-55TLA3 finds applications in various electronic devices and systems, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS65WV12816BLL-55TLA3 include: - MT48LC16M16A2P-75IT: 256Mbit x 16 SDRAM, -40°C to +85°C operating temperature range. - K4S561632H-UC75: 256Mbit x 16 SDRAM, 3.3V operating voltage, 7.5 ns access time.

These alternative models offer similar functionality and can be used as replacements for IS65WV12816BLL-55TLA3 in compatible systems.

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10個與IS65WV12816BLL-55TLA3在技術方案中應用相關的常見問題與解答

Sure! Here are 10 common questions and answers related to the application of IS65WV12816BLL-55TLA3 in technical solutions:

1. What is IS65WV12816BLL-55TLA3? IS65WV12816BLL-55TLA3 is a specific model of synchronous dynamic random-access memory (SDRAM) chip manufactured by Integrated Silicon Solution Inc. It has a capacity of 128 megabits (16 megabytes) and operates at a speed of 55 nanoseconds.

2. What are the key features of IS65WV12816BLL-55TLA3? Some key features of IS65WV12816BLL-55TLA3 include a low-power consumption design, synchronous interface for high-speed data transfer, burst mode operation, and compatibility with various microcontrollers and processors.

3. What are the typical applications of IS65WV12816BLL-55TLA3? IS65WV12816BLL-55TLA3 is commonly used in applications that require high-speed and reliable memory storage, such as networking equipment, telecommunications devices, industrial automation systems, and embedded systems.

4. What is the voltage requirement for IS65WV12816BLL-55TLA3? IS65WV12816BLL-55TLA3 operates at a supply voltage of 3.3 volts (VDD).

5. Can IS65WV12816BLL-55TLA3 be used in both commercial and industrial environments? Yes, IS65WV12816BLL-55TLA3 is designed to operate reliably in both commercial and industrial temperature ranges, making it suitable for a wide range of applications.

6. Does IS65WV12816BLL-55TLA3 support multiple banks? Yes, IS65WV12816BLL-55TLA3 has four internal banks, allowing for concurrent access to different memory locations and improving overall performance.

7. What is the maximum operating frequency of IS65WV12816BLL-55TLA3? IS65WV12816BLL-55TLA3 can operate at a maximum frequency of 55 MHz, which corresponds to a cycle time of 18 nanoseconds.

8. Can IS65WV12816BLL-55TLA3 be used as a drop-in replacement for other SDRAM chips? In most cases, yes. IS65WV12816BLL-55TLA3 follows industry-standard pinout and interface specifications, making it compatible with many existing SDRAM designs.

9. Does IS65WV12816BLL-55TLA3 support self-refresh mode? Yes, IS65WV12816BLL-55TLA3 supports self-refresh mode, which allows the chip to retain data even when the system is in a low-power state.

10. Are there any specific design considerations when using IS65WV12816BLL-55TLA3? When designing with IS65WV12816BLL-55TLA3, it is important to ensure proper signal integrity, provide stable power supply, adhere to timing requirements, and follow recommended PCB layout guidelines provided by the manufacturer to achieve optimal performance and reliability.