IS64WV25616BLL-10CTLA3

Product Overview

Category

IS64WV25616BLL-10CTLA3 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS64WV25616BLL-10CTLA3 is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of IS64WV25616BLL-10CTLA3 lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

This product is typically packaged in trays or reels, with a quantity of 1000 units per package.

Specifications

• Part Number: IS64WV25616BLL-10CTLA3
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 256Mbit x 16
• Operating Voltage: 3.3V
• Speed Grade: 10ns
• Interface: Parallel
• Package Type: BGA
• Temperature Range: Commercial (-40°C to +85°C)

Detailed Pin Configuration

The IS64WV25616BLL-10CTLA3 has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. WE#
20. CAS#
21. RAS#
22. CKE
23. A0
24. A1
25. A2
26. A3
27. A4
28. A5
29. A6
30. A7
31. A8
32. A9
33. A10
34. A11
35. A12
36. A13
37. A14
38. A15
39. A16
40. A17
41. A18
42. A19
43. A20
44. NC
45. NC
46. VDD
47. VSS
48. NC

Functional Features

• Synchronous operation for high-speed data transfer
• Burst mode support for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for integration in space-constrained designs

Disadvantages

• Limited compatibility with older systems that do not support synchronous DRAM
• Higher cost compared to other memory technologies like NAND flash

Working Principles

IS64WV25616BLL-10CTLA3 operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending commands and addresses to select specific rows and columns, allowing for fast read and write operations.

Detailed Application Field Plans

IS64WV25616BLL-10CTLA3 finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Mobile devices (smartphones, tablets) 5. Automotive electronics 6. Industrial control systems 7. Medical equipment 8. Consumer electronics

Detailed and Complete Alternative Models

1. IS64WV25616BLL-12CTLA3
2. IS64WV25616BLL-15CTLA3
3. IS64WV25616BLL-20CTLA3
4. IS64WV25616BLL-25CTLA3
5. IS64WV25616BLL-30CTLA3

These alternative models offer different speed grades to cater to specific performance requirements.

In conclusion, the IS64WV25616BLL-10CTLA3 is a high-speed synchronous DRAM with a large storage capacity. It offers advantages such as low power consumption and compact package size. However, it may have limited compatibility and a higher cost compared