IS45S32400F-7TLA1

Product Overview

Category

IS45S32400F-7TLA1 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact size

Package

IS45S32400F-7TLA1 is available in a small form factor package, designed to fit seamlessly into various electronic devices.

Essence

The essence of IS45S32400F-7TLA1 lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS45S32400F-7TLA1 is typically packaged individually and is available in varying quantities depending on the requirements of the customer or manufacturer.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 4 Gigabits (512 Megabytes)
• Bus Width: x32
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 5.4 ns
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS45S32400F-7TLA1 is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. WE#
20. CAS#
21. RAS#
22. CKE
23. CS#
24. BA0
25. BA1
26. A0
27. A1
28. A2
29. A3
30. A4
31. A5
32. A6
33. A7
34. A8
35. A9
36. A10
37. A11
38. A12
39. A13
40. A14
41. A15
42. A16
43. A17
44. A18
45. A19
46. A20
47. A21
48. A22
49. A23
50. VDDQ
51. VSSQ

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance
• Large storage capacity allows for extensive data storage
• Low power consumption prolongs battery life in portable devices
• Compact size enables integration into various electronic devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to non-volatile memory types
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

IS45S32400F-7TLA1 operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending specific commands and addresses to the memory controller, which activates the appropriate row and column to read or write data.

Detailed Application Field Plans

IS45S32400F-7TLA1 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS45S32400F-7TLA1 include: - MT41K256M16TW-107 IT:P - K4B2G1646E-BCK0 - H5TC4G63CFR-PBA - M471A5244CB0-CRC

These alternative models offer similar functionality and can be used as substitutes depending on specific requirements and compatibility with the target system.

In conclusion, IS45S32400F-7TLA1 is a high-performance synchronous DRAM that provides fast and reliable data storage capabilities. Its compact size, low power consumption, and large storage capacity make it suitable for a wide range of electronic devices. While it has certain disadvantages such as higher cost and limited endurance, its