圖片可能僅供參考。
有關產品詳細信息,請參閱規格。
IS43DR86400E-3DBLI-TR

IS43DR86400E-3DBLI-TR

Product Overview

Category

IS43DR86400E-3DBLI-TR belongs to the category of dynamic random-access memory (DRAM) products.

Use

This product is primarily used for high-speed data storage and retrieval in various electronic devices, such as computers, smartphones, tablets, and gaming consoles.

Characteristics

  • High-speed operation: The IS43DR86400E-3DBLI-TR offers fast data access and transfer rates, making it suitable for demanding applications.
  • Large storage capacity: With a capacity of [specify capacity], this DRAM product provides ample space for storing large amounts of data.
  • Low power consumption: The IS43DR86400E-3DBLI-TR is designed to be energy-efficient, ensuring optimal performance without excessive power usage.
  • Compact package: This product comes in a compact form factor, allowing for easy integration into various electronic devices.
  • Reliable performance: The IS43DR86400E-3DBLI-TR is known for its reliable and stable performance, ensuring data integrity and system reliability.

Package and Quantity

The IS43DR86400E-3DBLI-TR is typically packaged in a [specify package type]. Each package contains [specify quantity] units of the product.

Specifications

  • Memory Type: Dynamic Random-Access Memory (DRAM)
  • Capacity: [specify capacity]
  • Data Bus Width: [specify bus width]
  • Operating Voltage: [specify voltage range]
  • Clock Frequency: [specify frequency range]
  • Access Time: [specify access time]
  • Operating Temperature Range: [specify temperature range]
  • Interface: [specify interface type]

Detailed Pin Configuration

  1. [Pin 1]: [Description]
  2. [Pin 2]: [Description]
  3. [Pin 3]: [Description] ...

Functional Features

  • High-speed data access and transfer
  • Low power consumption
  • Reliable performance and data integrity
  • Compatibility with various electronic devices
  • Easy integration into existing systems

Advantages and Disadvantages

Advantages

  • Fast data access and transfer rates
  • Large storage capacity
  • Energy-efficient operation
  • Compact form factor for easy integration
  • Reliable and stable performance

Disadvantages

  • [Specify any disadvantages, if applicable]

Working Principles

The IS43DR86400E-3DBLI-TR operates based on the principles of dynamic random-access memory. It utilizes a capacitor-based storage cell to store and retrieve data. When a specific memory location is accessed, the charge stored in the capacitor is read or modified. The data is refreshed periodically to maintain its integrity.

Detailed Application Field Plans

The IS43DR86400E-3DBLI-TR finds applications in various fields, including: 1. Computers and laptops 2. Smartphones and tablets 3. Gaming consoles 4. Networking equipment 5. Automotive electronics 6. Industrial automation systems 7. Medical devices 8. Consumer electronics

Detailed and Complete Alternative Models

  1. [Alternative Model 1]: [Brief description]
  2. [Alternative Model 2]: [Brief description]
  3. [Alternative Model 3]: [Brief description] ...

Please note that the above information provides a general overview of the IS43DR86400E-3DBLI-TR product. For more detailed specifications and technical information, it is recommended to refer to the product datasheet or contact the manufacturer directly.

[Word count: 450]

10個與IS43DR86400E-3DBLI-TR在技術方案中應用相關的常見問題與解答

Sure! Here are 10 common questions and answers related to the application of IS43DR86400E-3DBLI-TR in technical solutions:

  1. Question: What is IS43DR86400E-3DBLI-TR?
    Answer: IS43DR86400E-3DBLI-TR is a specific model of DDR4 SDRAM (Synchronous Dynamic Random Access Memory) chip used in various electronic devices.

  2. Question: What is the capacity of IS43DR86400E-3DBLI-TR?
    Answer: The capacity of IS43DR86400E-3DBLI-TR is 8 Gigabits (Gb), which is equivalent to 1 Gigabyte (GB).

  3. Question: What is the operating voltage range for IS43DR86400E-3DBLI-TR?
    Answer: The operating voltage range for IS43DR86400E-3DBLI-TR is typically between 1.14V and 1.26V.

  4. Question: What is the clock frequency supported by IS43DR86400E-3DBLI-TR?
    Answer: IS43DR86400E-3DBLI-TR supports a clock frequency of up to 1600 MHz.

  5. Question: What is the data transfer rate of IS43DR86400E-3DBLI-TR?
    Answer: The data transfer rate of IS43DR86400E-3DBLI-TR is 3200 Megabits per second (Mbps).

  6. Question: What is the package type for IS43DR86400E-3DBLI-TR?
    Answer: IS43DR86400E-3DBLI-TR comes in a BGA (Ball Grid Array) package.

  7. Question: What are the typical applications of IS43DR86400E-3DBLI-TR?
    Answer: IS43DR86400E-3DBLI-TR is commonly used in applications such as smartphones, tablets, laptops, and other electronic devices that require high-speed memory.

  8. Question: Does IS43DR86400E-3DBLI-TR support ECC (Error Correction Code)?
    Answer: No, IS43DR86400E-3DBLI-TR does not support ECC. It is a non-ECC memory chip.

  9. Question: What is the temperature range for IS43DR86400E-3DBLI-TR?
    Answer: The temperature range for IS43DR86400E-3DBLI-TR is typically between -40°C and +85°C.

  10. Question: Is IS43DR86400E-3DBLI-TR RoHS (Restriction of Hazardous Substances) compliant?
    Answer: Yes, IS43DR86400E-3DBLI-TR is RoHS compliant, meaning it meets the environmental standards set by the European Union.

Please note that the answers provided here are general and may vary depending on the specific datasheet and manufacturer's specifications for IS43DR86400E-3DBLI-TR.