IS42S32800B-6B

Product Overview

Category

IS42S32800B-6B belongs to the category of dynamic random access memory (DRAM) chips.

Use

It is primarily used as a main memory component in various electronic devices such as computers, smartphones, tablets, and gaming consoles.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into electronic devices

Package

IS42S32800B-6B is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32800B-6B lies in its ability to provide efficient and reliable data storage and retrieval functions for electronic devices.

Packaging/Quantity

IS42S32800B-6B is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 8 bits
• Operating Voltage: 3.3V
• Speed Grade: 6B
• Clock Frequency: Up to 166 MHz
• Interface: Parallel
• Burst Length: 1, 2, 4, 8, Full Page
• Refresh Mode: Auto-refresh, Self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS42S32800B-6B follows a standard pin configuration for SODIMM modules. The pins are labeled as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQM0
12. DQM1
13. CAS
14. RAS
15. WE
16. CKE
17. A0
18. A1
19. A2
20. A3
21. A4
22. A5
23. A6
24. A7
25. A8
26. A9
27. A10
28. A11
29. BA0
30. BA1
31. CLK
32. VSS

Functional Features

• High-speed data transfer rate for efficient memory operations
• Low power consumption for improved energy efficiency
• Support for various burst lengths to accommodate different data transfer requirements
• Auto-refresh and self-refresh modes for maintaining data integrity during power fluctuations
• Compatibility with standard parallel interfaces for easy integration into electronic devices

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speeds
• Large storage capacity
• Compact size for space-constrained devices
• Low power consumption

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure

Working Principles

IS42S32800B-6B operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. The data is accessed by sending specific commands and addresses to the memory module, which activates the corresponding capacitors and retrieves the stored data.

Detailed Application Field Plans

IS42S32800B-6B finds extensive use in various electronic devices that require high-speed and reliable data storage capabilities. Some of the common application fields include:

1. Personal Computers (PCs) and Laptops
2. Servers and Data Centers
3. Mobile Devices (Smartphones, Tablets)
4. Gaming Consoles
5. Networking Equipment

Detailed and Complete Alternative Models

• IS42S16160D-7TLI: 16M words x 16 bits SDRAM
• IS42S16400F-6TLI: 16M words x 4 bits SDRAM
• IS42S32200E-7TLI: 32M words x 16 bits SDRAM
• IS42S32400F-6TLI: 32M words x 4 bits SDRAM
• IS42S32800J-7TLI: 32M words x 8 bits SDRAM

These alternative models offer similar functionality and can be used as substitutes for IS42S32800B-6B in various applications.

In conclusion, IS42S32800B-6B is a high-performance DRAM chip that provides efficient and reliable data storage capabilities for a wide range