IS42S16800F-6B-TR

Product Overview

Category

IS42S16800F-6B-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S16800F-6B-TR is available in a small outline dual in-line memory module (SODIMM) package. This compact form factor makes it suitable for use in space-constrained devices.

Essence

The essence of IS42S16800F-6B-TR lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS42S16800F-6B-TR is typically packaged in trays or reels, with each tray or reel containing a specific quantity of modules. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 128 Megabytes (MB)
• Organization: 16 Megabytes x 8 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS42S16800F-6B-TR follows a standard pin configuration for SODIMM modules. The detailed pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CKE
42. /CLK
43. VDD
44. VSS

Functional Features

• High-speed data transfer: IS42S16800F-6B-TR offers fast data transfer rates, allowing for quick access to stored information.
• Low power consumption: This module is designed to operate efficiently with minimal power consumption, extending the battery life of portable devices.
• Error correction: It incorporates error correction techniques to ensure data integrity and reliability.
• Burst mode operation: IS42S16800F-6B-TR supports burst mode operation, enabling consecutive memory accesses at high speeds.

Advantages and Disadvantages

Advantages

• Fast data transfer rates enhance overall system performance.
• Compact form factor allows for easy integration into space-constrained devices.
• Low power consumption prolongs battery life in portable devices.
• Error correction techniques ensure data integrity.
• Burst mode operation enables high-speed consecutive memory accesses.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit of storage compared to alternative memory options.

Working Principles

IS42S16800F-6B-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data is accessed by sending commands and addresses through the module's interface, allowing for rapid retrieval and modification of data.

Detailed Application Field Plans

IS42S16800F-6B-TR finds applications in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Embedded systems 5. Industrial automation 6. Medical devices 7. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42S16800F-6B-TR include: 1. MT8JTF12864HZ-1G6E1 2. KVR16LS11/8 3. HMT451S6AFR8A-P