IS42S16160D-6TL-TR

Product Overview

Category

IS42S16160D-6TL-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S16160D-6TL-TR is available in a small outline, thin profile (TSOP) package. This package ensures easy integration into various electronic devices.

Essence

The essence of IS42S16160D-6TL-TR lies in its ability to provide fast and efficient data storage and retrieval capabilities, making it an essential component in modern electronic devices.

Packaging/Quantity

IS42S16160D-6TL-TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for large-scale production.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 6
• Access Time: 6 ns
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160D-6TL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /BA0
44. /BA1
45. VSS
46. CLK
47. CKE
48. /CKE

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• On-chip burst counter for automatic column address generation
• Programmable burst length and latency
• Power-saving modes (auto-refresh and self-refresh)
• Internal pipelined architecture for improved performance

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity accommodates complex applications.
• Low power consumption prolongs battery life in portable devices.
• Compact package size allows for space-efficient designs.
• Reliable performance ensures data integrity.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited endurance due to the nature of DRAM cells.
• Susceptible to data loss if not properly refreshed.
• Sensitivity to external electrical noise may affect performance.

Working Principles

IS42S16160D-6TL-TR operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data is accessed by applying appropriate row and column addresses to select the desired memory location. The synchronous nature of the memory allows for high-speed data transfer between the memory and the processor.

Detailed Application Field Plans

IS42S16160D-6TL-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Its high-speed and large storage capacity make it suitable for demanding applications such as multimedia processing, gaming, and data-intensive tasks.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42S16160D-6TL-TR include: - MT48LC16M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd.