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IPD80R1K4CEBTMA1
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IPD80R1K4CEBTMA1

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High power handling, low on-resistance, fast switching speed
  • Package: TO-252-3 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Voltage Rating: 80V
  • Current Rating: 80A
  • On-Resistance: 1.4mΩ
  • Gate Charge: 45nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD80R1K4CEBTMA1 features a standard TO-252-3 pin configuration with the following pins: 1. Gate 2. Drain 3. Source

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient power management
  • High current handling capability for demanding applications

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-resistance for improved efficiency
  • Fast switching speed for responsive power control

Disadvantages

  • Sensitive to voltage spikes
  • Requires careful thermal management at high currents

Working Principles

The IPD80R1K4CEBTMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

The IPD80R1K4CEBTMA1 is suitable for a wide range of power switching applications, including: - Motor control systems - Power supplies - Inverters - Battery management systems

Detailed and Complete Alternative Models

  • IPD60R1K4CE - 60V, 80A, 1.4mΩ
  • IPD100R1K4CE - 100V, 80A, 1.4mΩ
  • IPD80R2K0CE - 80V, 100A, 2.0mΩ

This completes the English editing encyclopedia entry structure for the IPD80R1K4CEBTMA1, covering its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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10個與IPD80R1K4CEBTMA1在技術方案中應用相關的常見問題與解答

  1. What is the maximum drain-source voltage of IPD80R1K4CEBTMA1?

    • The maximum drain-source voltage of IPD80R1K4CEBTMA1 is 800V.

  2. What is the continuous drain current rating of IPD80R1K4CEBTMA1?

    • The continuous drain current rating of IPD80R1K4CEBTMA1 is 80A.

  3. What is the on-state resistance (RDS(on)) of IPD80R1K4CEBTMA1?

    • The on-state resistance (RDS(on)) of IPD80R1K4CEBTMA1 is 1.4 mΩ.

  4. What is the gate threshold voltage of IPD80R1K4CEBTMA1?

    • The gate threshold voltage of IPD80R1K4CEBTMA1 is typically 2.5V.

  5. What are the typical applications for IPD80R1K4CEBTMA1?

    • IPD80R1K4CEBTMA1 is commonly used in high-power switching applications such as motor control, power supplies, and inverters.

  6. What is the operating temperature range of IPD80R1K4CEBTMA1?

    • The operating temperature range of IPD80R1K4CEBTMA1 is typically -55°C to 150°C.

  7. Does IPD80R1K4CEBTMA1 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of IPD80R1K4CEBTMA1.

  8. Is IPD80R1K4CEBTMA1 suitable for automotive applications?

    • Yes, IPD80R1K4CEBTMA1 is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.

  9. What package type does IPD80R1K4CEBTMA1 come in?

    • IPD80R1K4CEBTMA1 is available in a TO-252-3 package.

  10. Are there any recommended companion components or evaluation boards for IPD80R1K4CEBTMA1?

    • Infineon provides application notes, reference designs, and evaluation boards that can be used with IPD80R1K4CEBTMA1 to aid in the design and implementation of technical solutions.