IPB80N06S2L-H5

Introduction

The IPB80N06S2L-H5 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPB80N06S2L-H5 is used as a switching device in power electronics applications.
• Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The IPB80N06S2L-H5 is typically available in a TO-263 package.
• Essence: Its essence lies in providing efficient power switching capabilities in electronic circuits.
• Packaging/Quantity: It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 60V
• Current Rating: 80A
• On-State Resistance: 8.5 mΩ
• Gate-Source Voltage (Max): ±20V
• Continuous Drain Current (at 25°C): 80A
• Pulsed Drain Current: 320A
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N06S2L-H5 typically has three pins: 1. Gate (G): Input pin for controlling the switching operation. 2. Drain (D): Output pin connected to the load. 3. Source (S): Common pin for the input and output circuits.

Functional Features

• Low On-State Resistance: Enables minimal power dissipation during conduction.
• High Switching Speed: Facilitates rapid switching transitions, reducing switching losses.
• Low Gate Charge: Allows for efficient control of the MOSFET.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion applications.
• Reduced heat generation due to low on-state resistance.
• Fast switching speed leading to improved system performance.

Disadvantages

• Sensitivity to voltage spikes and transients.
• Potential for thermal runaway under certain operating conditions.

Working Principles

The IPB80N06S2L-H5 operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can be switched on and off, allowing for efficient power regulation.

Detailed Application Field Plans

The IPB80N06S2L-H5 finds extensive use in the following application fields: - Switched-Mode Power Supplies (SMPS): Utilized in high-frequency power converters for efficient energy transfer. - Motor Control: Employed in motor drive circuits for variable speed control and energy conservation. - Voltage Regulation: Integrated into voltage regulator modules for stable power delivery.

Detailed and Complete Alternative Models

Some alternative models to the IPB80N06S2L-H5 include: - IRF1405: A similar power MOSFET with comparable voltage and current ratings. - IXFH80N06Q: Offers similar characteristics and performance in power switching applications. - STP80NF03L: An alternative MOSFET suitable for power electronics designs.

In conclusion, the IPB80N06S2L-H5 serves as a crucial component in power electronics, offering high efficiency and reliable performance in various applications.

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