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IPB80N04S204ATMA1
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IPB80N04S204ATMA1

Product Overview

Category

The IPB80N04S204ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • Excellent thermal performance

Package

The IPB80N04S204ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 80A
  • RDS(ON) (Max) @ VGS = 10V: 4mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N04S204ATMA1 follows the standard pin configuration for a power MOSFET: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current handling capacity
  • Low conduction losses
  • Fast switching characteristics
  • Enhanced thermal performance

Advantages

  • Efficient power management
  • Reduced heat dissipation
  • Improved system reliability
  • Suitable for high-frequency applications

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly and soldering

Working Principles

The IPB80N04S204ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPB80N04S204ATMA1 finds extensive use in the following applications: - Switch-mode power supplies - Motor control systems - DC-DC converters - Inverters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPB80N04S204ATMA1 include: - IRF1405PBF - FDP8878 - AUIRFN014

In conclusion, the IPB80N04S204ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management and control applications, making it an essential component in modern electronic systems.

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10個與IPB80N04S204ATMA1在技術方案中應用相關的常見問題與解答

  1. What is the maximum drain-source voltage of IPB80N04S204ATMA1?

    • The maximum drain-source voltage of IPB80N04S204ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB80N04S204ATMA1?

    • The continuous drain current rating of IPB80N04S204ATMA1 is 80A.

  3. What is the on-state resistance (RDS(on)) of IPB80N04S204ATMA1?

    • The on-state resistance (RDS(on)) of IPB80N04S204ATMA1 is typically 4mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPB80N04S204ATMA1?

    • The gate threshold voltage of IPB80N04S204ATMA1 is typically 2V.

  5. Can IPB80N04S204ATMA1 be used in automotive applications?

    • Yes, IPB80N04S204ATMA1 is designed for use in automotive applications.

  6. What is the operating temperature range of IPB80N04S204ATMA1?

    • The operating temperature range of IPB80N04S204ATMA1 is -55°C to 175°C.

  7. Does IPB80N04S204ATMA1 have built-in ESD protection?

    • Yes, IPB80N04S204ATMA1 features built-in ESD protection.

  8. Is IPB80N04S204ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB80N04S204ATMA1 is suitable for high-frequency switching applications.

  9. What package type does IPB80N04S204ATMA1 come in?

    • IPB80N04S204ATMA1 is available in a TO-263-7 package.

  10. Are there any application notes or reference designs available for using IPB80N04S204ATMA1 in motor control circuits?

    • Yes, application notes and reference designs are available for using IPB80N04S204ATMA1 in motor control circuits.