IPB011N04LGATMA1

Product Overview

Category

The IPB011N04LGATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power switching and amplification, such as in power supplies, motor control, and automotive systems.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The IPB011N04LGATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 40V
• Continuous Drain Current (ID): 100A
• On-Resistance (RDS(on)): 1.1mΩ
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V

Detailed Pin Configuration

The IPB011N04LGATMA1 typically has three pins: gate, drain, and source. The pinout configuration is as follows: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

• High current-carrying capability
• Low conduction losses
• Fast switching characteristics
• Enhanced thermal performance

Advantages

• Efficient power handling
• Reduced heat dissipation
• Improved system reliability
• Enhanced overall performance

Disadvantages

• Sensitivity to static electricity
• Complex drive circuitry required for optimal performance

Working Principles

The IPB011N04LGATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB011N04LGATMA1 finds extensive use in the following applications: - Switched-mode power supplies - Electric vehicle powertrains - Industrial motor drives - Solar inverters - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

Some alternative models to the IPB011N04LGATMA1 include: - IPB017N10N3 G - IPB019N15N3 G - IPB025N15N3 G - IPB027N15N3 G

In conclusion, the IPB011N04LGATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, despite its sensitivity to static electricity and the need for complex drive circuitry. Its efficient power handling, fast switching speed, and low on-resistance make it an integral component in modern electronic systems.

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