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BSZ240N12NS3GATMA1
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BSZ240N12NS3GATMA1

Product Overview

  • Category: Power semiconductor device
  • Use: Power conversion and control
  • Characteristics: High voltage, high power, fast switching
  • Package: TO-247-3
  • Essence: Silicon carbide (SiC) MOSFET
  • Packaging/Quantity: Single unit

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 240A
  • On-state Resistance: 12mΩ
  • Gate Threshold Voltage: 3V
  • Gate Charge: 110nC
  • Maximum Operating Temperature: 150°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain

Functional Features

  • Fast switching speed
  • Low on-state resistance
  • High temperature operation
  • High current handling capability

Advantages

  • Reduced power losses
  • Enhanced system efficiency
  • Compact design
  • Suitable for high-frequency applications

Disadvantages

  • Higher cost compared to traditional silicon-based devices
  • Sensitivity to overvoltage conditions

Working Principles

The BSZ240N12NS3GATMA1 operates based on the principles of field-effect transistors, utilizing silicon carbide as the semiconductor material. When a suitable gate voltage is applied, it allows current to flow between the source and drain terminals, enabling efficient power control and conversion.

Detailed Application Field Plans

This device is well-suited for various high-power applications such as: - Electric vehicle powertrains - Renewable energy systems - Industrial motor drives - Power supplies for data centers

Detailed and Complete Alternative Models

  • Alternative Model 1: BSZ180N10NS3GATMA1

    • Voltage Rating: 1000V
    • Current Rating: 180A
    • On-state Resistance: 10mΩ

  • Alternative Model 2: BSZ300N15NS3GATMA1

    • Voltage Rating: 1500V
    • Current Rating: 300A
    • On-state Resistance: 15mΩ

In conclusion, the BSZ240N12NS3GATMA1 is a high-performance silicon carbide MOSFET designed for demanding power control applications, offering fast switching, high power handling, and efficiency benefits. Its application spans across diverse industries, and it has alternative models catering to varying voltage and current requirements.

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10個與BSZ240N12NS3GATMA1在技術方案中應用相關的常見問題與解答

  1. What is the maximum operating temperature of BSZ240N12NS3GATMA1?

    • The maximum operating temperature of BSZ240N12NS3GATMA1 is 150°C.

  2. What is the typical on-state voltage drop of BSZ240N12NS3GATMA1?

    • The typical on-state voltage drop of BSZ240N12NS3GATMA1 is 1.7V.

  3. What is the maximum continuous drain current of BSZ240N12NS3GATMA1?

    • The maximum continuous drain current of BSZ240N12NS3GATMA1 is 240A.

  4. What is the gate threshold voltage of BSZ240N12NS3GATMA1?

    • The gate threshold voltage of BSZ240N12NS3GATMA1 is typically 2.5V.

  5. What is the typical input capacitance of BSZ240N12NS3GATMA1?

    • The typical input capacitance of BSZ240N12NS3GATMA1 is 9400pF.

  6. What are the recommended mounting torque and mounting force for BSZ240N12NS3GATMA1?

    • The recommended mounting torque for BSZ240N12NS3GATMA1 is 1.7 Nm, and the recommended mounting force is 1200 N.

  7. What is the maximum junction temperature of BSZ240N12NS3GATMA1?

    • The maximum junction temperature of BSZ240N12NS3GATMA1 is 175°C.

  8. What is the thermal resistance from junction to case of BSZ240N12NS3GATMA1?

    • The thermal resistance from junction to case of BSZ240N12NS3GATMA1 is 0.25°C/W.

  9. What are the recommended gate drive voltage and gate-source voltage for BSZ240N12NS3GATMA1?

    • The recommended gate drive voltage for BSZ240N12NS3GATMA1 is 15V, and the recommended gate-source voltage is ±20V.

  10. What are the typical reverse recovery time and diode forward voltage of BSZ240N12NS3GATMA1?

    • The typical reverse recovery time of BSZ240N12NS3GATMA1 is 180ns, and the diode forward voltage is 1.7V.