NBPMANN250MGUNV
Product Overview
- Category: Electronic Component
- Use: Signal Amplification
- Characteristics: High Gain, Low Noise, Wide Bandwidth
- Package: TO-92
- Essence: NPN Bipolar Junction Transistor
- Packaging/Quantity: 100 pieces per pack
Specifications
- Maximum Collector Current (Ic): 250mA
- Maximum Collector-Emitter Voltage (Vce): 40V
- Maximum Power Dissipation (Pd): 625mW
- Transition Frequency (ft): 300MHz
- Noise Figure (NF): 4dB
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High gain and low noise make it suitable for low-level signal amplification.
- Wide bandwidth allows for amplification of a broad range of frequencies.
Advantages
- Small package size (TO-92) makes it suitable for compact designs.
- High gain and low noise improve signal quality.
Disadvantages
- Limited maximum collector current may restrict use in high-power applications.
- Lower power dissipation compared to some alternative models.
Working Principles
The NBPMANN250MGUNV operates based on the principles of bipolar junction transistors, utilizing the control of current flow to amplify signals.
Detailed Application Field Plans
- Audio Amplification: Suitable for amplifying low-level audio signals in portable devices.
- RF Amplification: Can be used in radio frequency circuits due to its wide bandwidth.
- Sensor Interface: Ideal for amplifying weak sensor signals in various electronic systems.
Detailed and Complete Alternative Models
- NBPMANN500MGUNV: Higher maximum collector current for more demanding applications.
- NBPNPN250MGUNV: PNP polarity equivalent for complementary circuit designs.
- NBPMMAN200MGUNV: Lower power dissipation for energy-efficient applications.
This comprehensive entry provides an in-depth understanding of the NBPMANN250MGUNV, covering its specifications, features, applications, and alternatives.