CY62128ELL-55SXE

Product Overview

Category

CY62128ELL-55SXE belongs to the category of static random access memory (SRAM) chips.

Use

This product is commonly used in electronic devices for storing and retrieving data quickly. It provides high-speed read and write operations, making it suitable for applications that require fast access to data.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Small form factor
• Reliable performance

Package

CY62128ELL-55SXE comes in a compact package that ensures easy integration into various electronic devices. The package type may vary depending on the manufacturer's specifications.

Essence

The essence of CY62128ELL-55SXE lies in its ability to provide fast and reliable data storage and retrieval in electronic devices.

Packaging/Quantity

The product is typically packaged in reels or trays, depending on the manufacturer's packaging standards. The quantity per package may vary, but it is usually specified by the manufacturer.

Specifications

• Memory Size: 128 kilobits (16 kilobytes)
• Organization: 16,384 words × 8 bits
• Operating Voltage: 2.7V - 3.6V
• Access Time: 55 nanoseconds
• Standby Current: <1 microampere
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount Technology (SMT)

Detailed Pin Configuration

The CY62128ELL-55SXE chip has a total of 28 pins. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A13)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• High-speed read and write operations
• Low power consumption in standby mode
• Non-volatile storage of data
• Easy integration into electronic devices
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• Fast access to stored data
• Low power consumption
• Small form factor for space-constrained applications
• Reliable performance in different temperature ranges

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to some alternative memory options

Working Principles

CY62128ELL-55SXE operates based on the principles of static random access memory. It uses flip-flops to store each bit of data, which allows for fast access times. The chip maintains the stored data even when the power supply is turned off, making it non-volatile.

Detailed Application Field Plans

CY62128ELL-55SXE finds applications in various electronic devices that require high-speed data storage and retrieval. Some common application fields include:

1. Embedded systems
2. Networking equipment
3. Communication devices
4. Industrial automation
5. Consumer electronics

Detailed and Complete Alternative Models

1. CY62128EV30LL-45ZSXIT: 128 kilobits SRAM, 45 nanoseconds access time, extended temperature range.
2. AS6C62256A-55PCN: 256 kilobits SRAM, 55 nanoseconds access time, through-hole package.
3. IS61LV25616AL-10TLI: 256 kilobits SRAM, 10 nanoseconds access time, low voltage operation.

These alternative models offer similar functionality and can be considered as substitutes for CY62128ELL-55SXE depending on specific requirements.

In conclusion, CY62128ELL-55SXE is a high-speed static random access memory chip that provides reliable data storage and retrieval in various electronic devices. Its small form factor, low power consumption, and non-volatile storage make it suitable for a wide range of applications. While it has limitations in terms of storage capacity and cost per bit, alternative models are available to meet specific requirements.