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BD242A-S
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BD242A-S

Product Overview

Category: Semiconductor
Use: Power transistor for high-voltage applications
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: NPN silicon power transistor
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 6A
  • Power Dissipation (PD): 65W
  • Transition Frequency (fT): 3MHz
  • Operating Temperature: -65°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed
  • Complementary PNP type available (BD241A-S)

Advantages and Disadvantages

Advantages: - Suitable for high-voltage applications - Low saturation voltage reduces power dissipation

Disadvantages: - Limited maximum collector current compared to some alternatives

Working Principles

The BD242A-S operates as a switch, controlling the flow of current between the collector and emitter terminals based on the current flowing into the base terminal.

Detailed Application Field Plans

  1. Switching power supplies
  2. Motor control
  3. Audio amplifiers
  4. Electronic ballasts
  5. Inverters

Detailed and Complete Alternative Models

  1. BD243A-S
  2. TIP31C
  3. MJE3055T
  4. 2N3055

Note: The above list is not exhaustive and may vary based on specific application requirements.

This completes the English editing encyclopedia entry structure format for BD242A-S.

10個與BD242A-S在技術方案中應用相關的常見問題與解答

  1. What is BD242A-S?

    • BD242A-S is a silicon NPN power transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key features of BD242A-S?

    • The key features of BD242A-S include high current capability, low saturation voltage, and complementary PNP types available (BD241A-S).

  3. What are the typical applications of BD242A-S?

    • Typical applications of BD242A-S include audio amplifiers, power linear and switching, and general-purpose amplification and switching.

  4. What is the maximum collector current of BD242A-S?

    • The maximum collector current of BD242A-S is 3A.

  5. What is the maximum collector-emitter voltage of BD242A-S?

    • The maximum collector-emitter voltage of BD242A-S is 100V.

  6. What is the typical hFE (DC current gain) of BD242A-S?

    • The typical hFE of BD242A-S is 40 to 160 at IC = 0.5A.

  7. What is the power dissipation of BD242A-S?

    • The power dissipation of BD242A-S is 65W.

  8. What are the recommended operating conditions for BD242A-S?

    • The recommended operating conditions for BD242A-S include a collector current (IC) of 3A, collector-emitter voltage (VCE) of 100V, and a base current (IB) of 0.5A.

  9. Is BD242A-S suitable for high-power switching applications?

    • Yes, BD242A-S is suitable for high-power switching applications due to its high current capability and low saturation voltage.

  10. Are there any complementary PNP transistors available for use with BD242A-S?

    • Yes, complementary PNP transistors, such as BD241A-S, are available for use with BD242A-S in various amplifier and switching applications.