BLF8G19LS-170BV,11

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power output, high efficiency, and wide frequency range - Package: Surface Mount - Essence: Provides high-power amplification for RF signals - Packaging/Quantity: Typically packaged in reels of 1000 units

Specifications: - Frequency Range: 1.8 GHz to 2.2 GHz - Power Output: 170 Watts - Voltage: 28 Volts - Efficiency: Greater than 60% - Gain: 19 dB

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Bias

Functional Features: - High power output for RF signal amplification - Wide frequency range for versatile applications - High efficiency for reduced power consumption - Surface mount package for easy integration into circuit boards

Advantages: - High power output capability - Wide frequency range - High efficiency - Compact surface mount package

Disadvantages: - Sensitive to voltage fluctuations - Requires careful heat dissipation management

Working Principles: The BLF8G19LS-170BV,11 operates on the principle of amplifying radio frequency signals using a combination of active and passive components to achieve high power output with minimal distortion.

Detailed Application Field Plans: - Telecommunications infrastructure - Radar systems - Wireless base stations - Satellite communication systems

Detailed and Complete Alternative Models: - BLF888A - BLF184XR - BLF578XR

This product is a crucial component in RF power amplification systems, providing high power output and efficiency across a wide frequency range, making it suitable for various applications in telecommunications, radar, and wireless communication systems.

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