BLF888,112

Product Overview

BLF888,112 belongs to the category of high-power RF transistors. It is commonly used in applications such as radio frequency amplification and broadcasting. The transistor exhibits high power handling capabilities and excellent linearity. It is typically packaged in a metal-ceramic package and is designed for use in high-frequency communication systems. The package contains a single transistor and is designed to dissipate heat efficiently.

Specifications

• Frequency Range: 470-860 MHz
• Output Power: 125W
• Gain: 17dB
• Package Type: Metal-Ceramic
• Quantity per Package: 1

Detailed Pin Configuration

The BLF888,112 transistor has a standard pin configuration with input, output, and bias connections. The pinout is as follows: - Pin 1: Input - Pin 2: Ground - Pin 3: Bias - Pin 4: Output

Functional Features

• High Power Handling: The BLF888,112 can handle high RF power levels, making it suitable for high-power applications.
• Excellent Linearity: The transistor maintains good linearity even at high power levels, ensuring minimal distortion in the amplified signal.

Advantages and Disadvantages

Advantages

• High Power Handling
• Good Linearity
• Efficient Heat Dissipation

Disadvantages

• Limited frequency range
• Requires careful matching for optimal performance

Working Principles

The BLF888,112 operates based on the principles of RF amplification. When biased and driven with an input signal, it amplifies the signal while maintaining linearity and efficiency. The transistor's design allows for effective heat dissipation, enabling reliable operation at high power levels.

Application Field Plans

The BLF888,112 is well-suited for use in broadcast transmitters, RF amplifiers, and other high-power communication systems operating in the UHF band. Its high power handling and linearity make it ideal for applications where high-quality signal amplification is crucial.

Alternative Models

• BLF888A
• BLF888B
• BLF888C

These alternative models offer similar performance characteristics and are compatible replacements for the BLF888,112 in various applications.

In conclusion, the BLF888,112 is a high-power RF transistor designed for applications requiring efficient amplification and high power handling. Its characteristics make it suitable for use in broadcast transmitters and other high-power communication systems operating in the UHF band.

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