BLF245,112 - Product Overview

Introduction

The BLF245,112 is a high-power LDMOS transistor designed for use in RF power amplifiers. This entry provides a comprehensive overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Component
• Use: RF Power Amplification
• Characteristics: High Power, Low Distortion
• Package: SOT539A
• Essence: LDMOS Transistor
• Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications

• Frequency Range: 470-860 MHz
• Output Power: 250 W
• Gain: 17 dB
• Efficiency: 30%
• Voltage: 32 V
• Current: 15 A

Detailed Pin Configuration

The BLF245,112 features a 4-pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D) 4. Thermal Pad (TP)

Functional Features

• High Power Output: Capable of delivering 250 W of RF power.
• Broad Frequency Range: Operates within the 470-860 MHz spectrum.
• High Efficiency: Achieves 30% efficiency, minimizing power loss.
• Robust Packaging: Housed in the SOT539A package for enhanced durability.

Advantages and Disadvantages

Advantages

• High Power Output
• Wide Frequency Range
• High Efficiency
• Robust Packaging

Disadvantages

• High Voltage Requirement
• Limited Current Handling Capacity

Working Principles

The BLF245,112 operates on the principle of LDMOS technology, utilizing lateral double-diffused MOSFETs to achieve high power amplification with low distortion. By applying a suitable gate-source voltage, the device modulates the flow of current between the drain and source, resulting in amplified RF signals.

Detailed Application Field Plans

The BLF245,112 is ideally suited for applications requiring high-power RF amplification within the UHF television broadcast band. It can be employed in transmitters for digital and analog television broadcasting, providing reliable amplification for terrestrial television signals.

Detailed and Complete Alternative Models

For users seeking alternative options, the following LDMOS transistors can be considered: 1. BLF278,112 - Frequency Range: 470-860 MHz - Output Power: 300 W - Gain: 18 dB 2. BLF188XR,112 - Frequency Range: 470-860 MHz - Output Power: 160 W - Gain: 16 dB

In conclusion, the BLF245,112 offers high-power amplification capabilities within the UHF television broadcast band, making it an essential component for RF transmitter applications.

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