AS7C1026B-10TCNTR

Product Overview

Category

AS7C1026B-10TCNTR belongs to the category of semiconductor memory devices.

Use

It is primarily used as a random access memory (RAM) device in various electronic systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Large storage capacity
• Reliable performance

Package

AS7C1026B-10TCNTR is available in a compact and industry-standard Thin Small Outline Package (TSOP).

Essence

The essence of AS7C1026B-10TCNTR lies in its ability to provide fast and efficient data storage and retrieval in electronic systems.

Packaging/Quantity

AS7C1026B-10TCNTR is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: AS7C1026B-10TCNTR
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Package Type: TSOP

Detailed Pin Configuration

AS7C1026B-10TCNTR has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

1. Vcc
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. /WE
27. /OE
28. /CE2
29. /CE1
30. /CE0
31. /UB
32. /LB
33. /BYTE
34. NC
35. Vss
36. Vss
37. Vss
38. Vss
39. Vss
40. Vss
41. Vss
42. Vss
43. Vss
44. Vss
45. Vss
46. Vss
47. Vss
48. Vcc

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Non-volatile storage retains data even when power is disconnected.
• Large storage capacity of 1M x 16 bits accommodates extensive data requirements.
• Reliable performance guarantees consistent and accurate data handling.

Advantages and Disadvantages

Advantages

• Fast access time enhances system performance.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile storage ensures data integrity during power interruptions.
• Large storage capacity caters to diverse application needs.
• Reliable performance minimizes data errors and system downtime.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond the specified storage capacity.
• Susceptible to electromagnetic interference (EMI) due to its semiconductor nature.

Working Principles

AS7C1026B-10TCNTR operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data. When a read or write operation is initiated, the appropriate address is provided, and the corresponding data is accessed from or written to the memory cells.

Detailed Application Field Plans

AS7C1026B-10TCNTR finds applications in various electronic systems that require high-speed and reliable data storage. Some potential application fields include:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Automotive electronics
6. Medical devices
7. Consumer electronics

Detailed and Complete Alternative Models

1. AS7C1026B-12TCNTR: Similar to AS7C1026B-10TCNTR but with a slightly slower access time of 12ns.
2. AS7C1026B-15TCNTR: Offers a larger storage capacity of 2M x 16 bits.
3. AS7C1026B-10TIN: Available in a different package type (Thin Small Outline Package, TSOP II).

These alternative models provide