AS4C128M8D2-25BINTR

Product Overview

Category

AS4C128M8D2-25BINTR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

It is primarily used as a main memory component in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• AS4C128M8D2-25BINTR is a high-density DRAM chip with a capacity of 128 megabits (16 megabytes).
• It operates at a speed of 25 nanoseconds, making it suitable for applications that require fast data access.
• The chip supports a synchronous interface, allowing for efficient communication with the device's processor.
• It operates at a low voltage, ensuring energy efficiency in power-constrained devices.

Package

AS4C128M8D2-25BINTR is available in a small outline integrated circuit (SOIC) package. This package type provides compactness and ease of integration into electronic devices.

Essence

The essence of AS4C128M8D2-25BINTR lies in its ability to store and retrieve data quickly, providing essential memory resources for efficient operation of electronic devices.

Packaging/Quantity

AS4C128M8D2-25BINTR is typically packaged in reels or trays, containing a specific quantity of chips per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Capacity: 128 megabits (16 megabytes)
• Speed: 25 nanoseconds
• Interface: Synchronous
• Voltage: Low voltage operation

Detailed Pin Configuration

AS4C128M8D2-25BINTR follows a standard pin configuration for DRAM chips. The detailed pinout is as follows:

1. VDD - Power supply
2. DQ0-DQ7 - Data input/output lines
3. DQ8-DQ15 - Data input/output lines
4. A0-A11 - Address lines
5. BA0-BA1 - Bank address lines
6. RAS - Row address strobe
7. CAS - Column address strobe
8. WE - Write enable
9. CKE - Clock enable
10. CLK - Clock input
11. VSS - Ground

Functional Features

• AS4C128M8D2-25BINTR offers high-speed data access, allowing for efficient processing of large amounts of information.
• It supports burst mode operation, enabling consecutive data transfers without the need for repeated address commands.
• The chip incorporates internal refresh circuitry to maintain data integrity over time.
• AS4C128M8D2-25BINTR features a low-power standby mode, reducing energy consumption during periods of inactivity.

Advantages and Disadvantages

Advantages

• High-density memory capacity
• Fast data access speed
• Synchronous interface for efficient communication
• Low voltage operation for energy efficiency

Disadvantages

• Relatively higher power consumption compared to non-volatile memory technologies
• Susceptible to data loss in case of power failure or system shutdown

Working Principles

AS4C128M8D2-25BINTR operates based on the principles of dynamic random-access memory. It stores data as electrical charges in tiny capacitors within the memory cells. To read or write data, the chip utilizes row and column address signals to access specific memory locations.

During read operations, the selected row is activated, and the charge stored in the capacitors is sensed and amplified to retrieve the data. For write operations, the desired data is written by applying appropriate voltages to the selected row and column.

Detailed Application Field Plans

AS4C128M8D2-25BINTR finds applications in various electronic devices and systems, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Mobile phones and tablets 5. Gaming consoles 6. Automotive electronics 7. Industrial control systems 8. Medical equipment

Detailed and Complete Alternative Models

Some alternative models to AS4C128M8D2-25BINTR with similar specifications and functionality include: 1. MT48LC16M16A2P-75IT: 128 megabit synchronous DRAM chip with a speed of 75 nanoseconds. 2. K4S561632H-UC75: 128 megabit synchronous DRAM chip with a speed of 75 nanoseconds. 3. HYB39S128160FE-7.5: 128 megabit synchronous DRAM chip with a speed of 7.5 nanoseconds.

These alternative models can be considered based on specific requirements and availability from different manufacturers.

In conclusion, AS4C128M8D2-25BINTR is a high-density DRAM chip that offers fast data