HYB18T1G800BF-3S

Overview

Product Category: Integrated Circuit (IC)

Use: Memory module for computer systems

Characteristics: - High-speed performance - Low power consumption - Reliable data storage - Compact size

Package: Small Outline Dual In-Line Memory Module (SODIMM)

Essence: The HYB18T1G800BF-3S is a high-performance memory module designed for use in computer systems. It provides fast and reliable data storage while consuming minimal power.

Packaging/Quantity: The HYB18T1G800BF-3S is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 1GB
• Speed: 800MHz
• Voltage: 1.5V
• Form Factor: SODIMM 204-pin
• CAS Latency: CL6
• Data Integrity Check: Non-ECC
• Operating Temperature: 0°C to 85°C

Pin Configuration

The HYB18T1G800BF-3S follows the standard pin configuration for SODIMM modules. It has a total of 204 pins arranged in a specific order to ensure proper connectivity with the computer system.

(Pin configuration diagram can be included here)

Functional Features

• High-speed data transfer: The HYB18T1G800BF-3S offers a speed of 800MHz, allowing for quick and efficient data transfer between the memory module and the computer system.
• Low power consumption: With a voltage requirement of only 1.5V, this memory module consumes minimal power, contributing to energy efficiency.
• Reliable data storage: The DDR3 SDRAM technology used in the HYB18T1G800BF-3S ensures reliable and secure storage of data, minimizing the risk of data loss or corruption.
• Compact size: The SODIMM form factor makes this memory module compact and suitable for use in laptops and other space-constrained computer systems.

Advantages

• High-speed performance enhances overall system responsiveness.
• Low power consumption contributes to energy efficiency and longer battery life in portable devices.
• Reliable data storage ensures the integrity of critical information.
• Compact size allows for easy installation in small form factor systems.

Disadvantages

• Limited capacity (1GB) may not be sufficient for memory-intensive applications.
• DDR3 technology may not be compatible with newer systems that require DDR4 or higher.

Working Principles

The HYB18T1G800BF-3S operates based on the principles of DDR3 SDRAM technology. It stores data in a synchronous manner, allowing for faster access and retrieval compared to older memory technologies. The memory module communicates with the computer system through the pins, transferring data back and forth as required by the system's operations.

Application Field Plans

The HYB18T1G800BF-3S is commonly used in various computer systems, including: - Laptops - Ultrabooks - Mini PCs - Industrial computers - Embedded systems

Its high-speed performance, low power consumption, and compact size make it suitable for these applications where space and energy efficiency are crucial.

Alternative Models

• HYB18T1G800BF-3S-A
• HYB18T1G800BF-3S-B
• HYB18T1G800BF-3S-C

These alternative models offer similar specifications and functionality to the HYB18T1G800BF-3S, providing users with options based on their specific requirements.

(Note: Additional alternative models can be listed here)

In conclusion, the HYB18T1G800BF-3S is a high-performance memory module designed for computer systems. Its fast data transfer, low power consumption, and compact size make it an ideal choice for various applications. However, its limited capacity and compatibility with older DDR3 technology may be considered as disadvantages in certain scenarios.