GT28F320B3TA110

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Varies depending on manufacturer and customer requirements

Specifications

• Capacity: 32 Megabits (4 Megabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The GT28F320B3TA110 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. RESET#
46. WP#
47. VSS
48. NC

Functional Features

• High-speed data transfer with fast read and write operations
• Non-volatile memory retains data even when power is disconnected
• Wide operating temperature range for various environments
• Low power consumption for energy efficiency
• Built-in error correction codes (ECC) for data integrity

Advantages and Disadvantages

Advantages: - Large storage capacity for storing a significant amount of data - Fast access times for quick retrieval of information - Reliable and durable, with high endurance and long data retention - Versatile application in various electronic devices

Disadvantages: - Limited rewrite cycles before the memory cells wear out - Higher cost compared to other types of memory - Requires additional circuitry for interfacing with the host device

Working Principles

The GT28F320B3TA110 utilizes a floating gate transistor technology called NOR flash memory. It stores data by trapping electric charge within insulated floating gate structures. This trapped charge determines the logic state of each memory cell, allowing for non-volatile data storage. The memory cells are organized into an array of rows and columns, with each cell representing a bit of data.

During read operations, the memory controller applies appropriate voltages to the address lines and activates the chip enable (CE#) and output enable (OE#) pins. The selected memory cell's stored charge is sensed, and the corresponding data is retrieved.

During write operations, the memory controller applies programming voltages to the address lines and activates the write enable (WE#) pin. The desired data is programmed by injecting or removing charge from the floating gate, altering the logic state of the memory cell.

Detailed Application Field Plans

The GT28F320B3TA110 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Consumer Electronics: Used in digital cameras, smartphones, tablets, and portable media players for storing photos, videos, and other multimedia files.
2. Automotive: Utilized in car infotainment systems, navigation systems, and engine control units (ECUs) for data storage and firmware updates.
3. Industrial Automation: Integrated into programmable logic controllers (PLCs), human-machine interfaces (HMIs), and industrial control systems for storing configuration data and program code.
4. Networking Equipment: Employed in routers, switches, and network attached storage (NAS) devices for firmware storage and system configuration.
5. Medical Devices: Used in medical equipment such as patient monitors, ultrasound machines, and diagnostic devices for data storage and software updates.

Alternative Models

• GT28F320C3TA110
• GT28F640B3TA110
• GT28F128B3TA110